ne678m04 nec's medium power npn silicon high frequency transistor r55 2.050.1 1.250.1 3 1.30 1 4 2 0.65 0.65 1.25 2.00.1 +0.30 +0.01 -0.05 0.65 0.65 +0.40 +0.30 -0.05 (leads 1, 3 and ,4) 0.590.05 +0.11 +0.1 -0.05 pin connections 1. emitter 2. collector 3. emitter 4. base notes: 1. pulsed measurement, pulse width 350 s, duty cycle 2 %. 2. collector to base capacitance measured by capacitance meter(automatic balance bridge method) when emitter pin is connected t o the guard pin of capacitance meter. 3. electronic industrail association of japan. 4. description nec's ne678m04 is fabricated using nec's hft3 wafer process. with a transition frequency of 12 ghz, the ne678m04 is usable in applications from 100 mhz to 3 ghz. the ne678m04 provides p1db of 18 dbm, even with low voltage and low current, making this device an excellent choice for the driver stage for mobile or fixed wireless applications. the ne678m04 is housed in nec's new low profile/flat lead style "m04" package ? high gain bandwidth: f t = 12 ghz ? high output power: p -1db = 18 dbm at 1.8 ghz ? high linear gain: g l = 13 db at 1.8 ghz ? new low profile m04 package: sot-343 footprint, with a height of only 0.59 mm flat lead style for better rf performance features part number ne678m04 package outline m04 eiaj 3 registration number 2sc5753 symbols parameters and conditions units min typ max i cbo collector cutoff current at v cb = 5v, i e = 0 na 100 i ebo emitter cutoff current at v eb = 1 v, i c = 0 na 100 h fe dc current 1 gain at v ce = 3 v, i c = 30 ma 75 120 150 p 1db output power at 1 db compression point at v ce = 2.8 v, i cq = 10 ma, dbm 18.0 f = 1.8 ghz, p in = 7 dbm g l linear gain at v ce = 2.8 v, i c = 10 ma, f = 1.8 ghz, p in = -5 dbm db 13.0 mag maximum available gain 4 at v ce = 3 v, i c = 30 ma, f = 2 ghz dbm 13.5 |s 21e | 2 insertion power gain at v ce = 3 v, i c = 30 ma, f = 2 ghz db 8.0 10.5 c collector efficiency at v ce = 2.8 v, i cq = 10 ma, f = 1.8 ghz, % 55 p in = 7 dbm nf noise figure at v ce = 3 v, i c = 7 ma, f = 2 ghz, z s = z opt db 1.7 2.5 f t gain bandwidth at v ce = 3 v, i c = 30 ma, f = 2 ghz ghz 12.0 cre reverse transfer capacitance 2 at v cb = 3 v, i c = 0, f = 1 mhz pf 0.42 0.7 electrical characteristics (t a = 25 c) dc rf california eastern laboratories mag = |s 21 | |s 12 | k - 1 ). 2 ( k
note: 1. operation in excess of any one of these parameters may result in permanent damage. 2. mounted on a 1.08cm 2 x 1.0 mm thick glass epoxy pcb. symbols parameters units ratings v cbo collector to base voltage v 9.0 v ceo collector to emitter voltage v 6.0 v ebo emitter to base voltage v 2.0 i c collector current ma 100 p t total power dissipation 2 mw 205 t j junction temperature c 150 t stg storage temperature c -65 to +150 absolute maximum ratings 1 (t a = 25 c) part number quantity NE678M04-T2-A 3k pcs./reel ordering information symbols parameters units ratings r th j-a thermal resistance from c/w 600 junction to ambient thermal resistance note: 1. mounted on a 1.08cm 2 x 1.0 mm thick glass epoxy pcb. total power dissipation vs. ambient temperature collector current vs. collector to emitter voltage dc current gain vs. collector current reverse transfer capacitance vs. collector to base voltage typical performance curves (t a = 25 c) ne678m04 300 250 200 205 150 100 50 0 25 50 75 100 125 150 mounted on glass epoxy pcb (1.08 cm 2 x 1.0 mm (t) ) 1.0 f= 1 mhz 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 1 2 3 4 5 6 100 90 80 70 60 50 40 30 20 10 0246 8 700 a 600 a 500 a 400 a 300 a 200 a i b =100 a 1000 v ce = 3 v 100 10 0.1 1 10 100 total power dissipation p out (mw) ambient temperature t a (oc) reverse transfer capacitance c re (pf) collector to base voltage v cb (v) collector current i c (ma) collector to emitter voltage v ce (v) dc current gain (h fe ) collector current i c (ma)
gain bandwidth product vs. collector current insertion power gain, mag, msg vs. collector current insertion power gain, mag, msg vs. collector current insertion power gain, mag, msg vs. frequency typical performance curves (t a = 25 c) ne678m04 insertion power gain, mag vs. collector current noise figure, associated gain vs. collector current 15 v ce = 3 v f = 2 ghz 10 5 0 110100 v ce = 3 v i c = 30 ma 35 30 25 20 15 10 5 0 0.1 110 msg |s 21e | 2 mag v ce = 3 v f = 1 ghz 25 20 15 10 5 0 1 10 100 |s 21e | 2 msg mag v ce = 3 v f = 2 ghz 100 10 1 0 5 10 15 20 25 |s 21e | 2 mag msg v ce = 3 v f = 2.5 ghz 100 10 1 0 5 10 15 20 25 |s 21e | 2 mag 8 6 4 4 0 2 0 1 10 100 8 12 16 g a nf v ce = 3 v f = 2 ghz gain bandwidth product f t (ghz) collector current i c (ma) insertion power gain |s 21e | 2 , (db) maximum available power gain mag (db) maximum stable power gain msg (db) frequency f (ma) insertion power gain |s 21e | 2 , (db) maximum available power gain mag (db) maximum stable power gain msg (db) collector current i c (ma) insertion power gain |s 21e | 2 , (db) maximum available power gain mag (db) maximum stable power gain msg (db) collector current i c (ma) insertion power gain |s 21e | 2 , (db) maximum available power gain mag (db) collector current i c (ma) noise figure nf (db) collector current i c (ma) associated gain g a (db)
output power, power gain, collector current, collector efficiency vs. input power output power, power gain, collector current, collector efficiency vs. input power typical performance curves (t a = 25 c) output power, power gain, collector current, collector efficiency vs. input power output power, power gain, collector current, collector efficiency vs. input power output power p out (dbm) power gain g p (db) input power p in (dbm) output power p out (dbm) power gain g p (db) input power p in (dbm) output power p out (dbm) power gain g p (db) input power p in (dbm) output power p out (dbm) power gain g p (db) input power p in (dbm) 25 v ce = 3.2 v f = 0.9 ghz i cq = 10 ma (rf off) 20 200 150 100 50 0 250 15 10 5 0 -10 -5 0 5 p out g p i c c 10 15 25 v ce = 2.8 v f = 1.8 ghz i cq = 10 ma (rf off) 20 200 150 100 50 0 250 15 10 5 0 -10 -5 0 5 p out g p i c c 10 15 25 v ce = 2.8 v f = 1.8 ghz i cq = 10 ma (rf off) 20 200 150 100 50 0 250 15 10 5 0 -10 -5 0 5 p out g p i c c 10 15 25 v ce = 3.2 v f = 1.8 ghz i cq = 10 ma (rf off) 20 200 150 100 50 0 250 15 10 5 0 -10 -5 0 5 p out g p i c c 10 15 25 v ce = 3.2 v f = 2.4 ghz i cq = 10 ma (rf off) 20 200 150 100 50 0 250 15 10 5 0 -10 -5 0 5 g p i c c 10 15 p out ne678m04 collector current i c (ma), collector efficiency c (%) collector current i c (ma), collector efficiency c (%) collector current i c (ma), collector efficiency c (%) collector current i c (ma), collector efficiency c (%)
ne678m04 frequency s 11 s 21 s 12 s 22 k mag 1 ghz mag ang mag ang mag ang mag ang (db) 0.100 0.72 -45.97 23.42 152.40 0.02 65.62 0.90 -29.51 0.10 29.97 0.200 0.68 -81.43 19.17 132.28 0.04 52.02 0.74 -51.31 0.18 26.71 0.300 0.65 -106.66 15.41 118.19 0.05 42.17 0.61 -66.86 0.26 24.93 0.400 0.63 -124.06 12.56 108.21 0.05 37.11 0.52 -77.84 0.34 23.61 0.500 0.62 -136.69 10.53 100.63 0.06 33.66 0.46 -86.27 0.42 22.62 0.600 0.60 -148.20 8.85 94.98 0.06 32.53 0.38 -92.24 0.56 21.75 0.700 0.60 -155.78 7.72 89.80 0.06 31.81 0.36 -98.70 0.62 21.00 0.800 0.60 -161.77 6.86 85.45 0.06 31.70 0.34 -102.52 0.68 20.32 0.900 0.60 -167.38 6.15 81.38 0.07 31.29 0.33 -106.64 0.74 19.72 1.000 0.60 -171.69 5.59 77.66 0.07 31.31 0.32 -110.16 0.79 19.17 1.500 0.59 170.30 3.81 61.44 0.08 33.17 0.31 -123.84 1.00 16.81 1.800 0.59 161.69 3.21 52.84 0.09 33.52 0.32 -130.08 1.07 13.98 1.900 0.59 158.90 3.05 50.05 0.09 33.69 0.32 -131.91 1.10 13.41 2.000 0.59 156.19 2.90 47.32 0.09 33.45 0.33 -133.96 1.11 12.93 2.500 0.59 142.62 2.35 33.99 0.11 32.55 0.36 -142.01 1.14 11.02 3.000 0.60 128.82 1.97 21.32 0.13 29.86 0.39 -149.47 1.15 9.63 3.500 0.61 114.69 1.69 9.12 0.14 26.40 0.43 -156.17 1.12 8.62 4.000 0.63 101.16 1.47 -2.44 0.16 21.89 0.47 -163.41 1.07 7.95 4.500 0.65 89.04 1.29 -13.44 0.18 16.66 0.50 -171.39 1.03 7.59 5.000 0.67 78.45 1.15 -23.86 0.19 10.92 0.53 179.62 0.98 7.69 5.500 0.69 68.99 1.02 -33.79 0.21 4.77 0.57 170.14 0.94 6.86 6.000 0.71 59.90 0.92 -43.00 0.23 -1.43 0.60 160.66 0.92 6.09 ne678m04 v c = 2 v, i c = 10 ma typical scattering parameters (t a = 25 c) note: 1. gain calculations: mag = |s 21 | |s 12 | k - 1 ). 2 ( k ? ? = s 11 s 22 - s 21 s 12 when k 1, mag is undefined and msg values are used. msg = |s 21 | |s 12 | , k = 1 + | ? | - |s 11 | - |s 22 | 2 2 2 2 |s 12 s 21 | , mag = maximum available gain msg = maximum stable gain j50 j100 j25 j10 0 -j10 -j25 -j50 -j100 10 50 100 25 s22 s11 +0o +0 o +90 o +45 o 5 20 -45 o -90 o -135 o +180 o +135 o 10 15
ne678m04 frequency s 11 s 21 s 12 s 22 k mag 1 ghz mag ang mag ang mag ang mag ang (db) 0.100 0.52 -74.30 39.85 141.89 0.02 63.14 0.79 -43.24 0.22 33.48 0.200 0.55 -114.70 28.29 120.64 0.03 50.10 0.58 -69.59 0.37 30.30 0.300 0.56 -136.33 20.98 108.33 0.03 45.90 0.46 -86.51 0.49 28.27 0.400 0.56 -149.34 16.42 100.26 0.03 45.26 0.40 -97.94 0.61 26.78 0.500 0.56 -158.35 13.45 94.25 0.04 45.86 0.36 -106.44 0.69 25.46 0.600 0.56 -167.02 11.22 90.08 0.04 47.13 0.30 -115.48 0.83 24.40 0.700 0.57 -172.39 9.70 85.86 0.04 48.18 0.28 -121.83 0.88 23.43 0.800 0.57 -176.68 8.57 82.27 0.05 49.01 0.27 -125.22 0.92 22.51 0.900 0.57 179.14 7.66 78.87 0.05 49.82 0.27 -128.89 0.96 21.72 1.000 0.57 176.07 6.93 75.71 0.06 50.22 0.26 -131.89 0.98 20.95 1.500 0.57 161.30 4.70 61.65 0.08 49.69 0.27 -142.80 1.07 16.35 1.800 0.57 153.82 3.96 53.96 0.09 48.26 0.27 -147.21 1.09 14.70 1.900 0.57 151.23 3.76 51.43 0.09 47.59 0.28 -148.33 1.09 14.25 2.000 0.57 148.83 3.58 48.96 0.10 46.86 0.28 -149.67 1.09 13.81 2.500 0.57 136.19 2.90 36.74 0.12 42.26 0.31 -154.80 1.09 12.03 3.000 0.57 123.25 2.44 24.91 0.14 36.84 0.34 -159.87 1.08 10.71 3.500 0.58 109.78 2.10 13.41 0.16 30.78 0.37 -164.45 1.06 9.71 4.000 0.60 96.93 1.84 2.30 0.18 24.27 0.40 -170.06 1.04 9.03 4.500 0.62 85.43 1.63 -8.43 0.19 17.67 0.43 -176.72 1.01 8.78 5.000 0.64 75.45 1.46 -18.79 0.21 11.05 0.47 175.39 0.98 8.46 5.500 0.65 66.54 1.32 -28.80 0.22 4.47 0.50 166.91 0.95 7.72 6.000 0.67 57.90 1.19 -38.45 0.24 -2.21 0.53 158.44 0.93 7.05 ne678m04 v c = 3 v, i c = 30 ma typical scattering parameters (t a = 25 c) note: 1. gain calculations: mag = |s 21 | |s 12 | k - 1 ). 2 ( k ? ? = s 11 s 22 - s 21 s 12 when k 1, mag is undefined and msg values are used. msg = |s 21 | |s 12 | , k = 1 + | ? | - |s 11 | - |s 22 | 2 2 2 2 |s 12 s 21 | , mag = maximum available gain msg = maximum stable gain j50 j100 j25 j10 0 -j10 -j25 -j50 -j100 10 50 100 25 s22 s11 +90 o +45 o +0 o 10 20 30 -45 o -90 o -135 o +180 o +135 o
exclusive north american agent for nec rf, microwave & optoelectronic semiconductors california eastern laboratories ? headquarters ? 4590 patrick henry drive ? santa clara, ca 95054-1817 ? (408) 988-3500 ? telex 34-6393 ? fax (408) 988-0279 internet: http://www.cel.com 02/07/2002 data subject to change without notice ne678m04 frequency s 11 s 21 s 12 s 22 k mag 1 ghz mag ang mag ang mag ang mag ang (db) 0.100 0.46 -92.27 47.62 136.35 0.01 61.08 0.69 -50.06 0.35 35.14 0.200 0.51 -129.65 31.64 115.69 0.02 51.85 0.49 -77.41 0.51 31.73 0.300 0.53 -147.72 22.84 104.50 0.03 50.27 0.39 -94.24 0.65 29.60 0.400 0.54 -158.40 17.67 97.25 0.03 51.38 0.34 -105.50 0.76 27.89 0.500 0.55 -165.77 14.38 91.83 0.03 53.36 0.31 -113.55 0.84 26.43 0.600 0.55 -173.25 11.98 88.17 0.04 54.92 0.26 -123.64 0.94 25.20 0.700 0.56 -177.75 10.33 84.28 0.04 55.88 0.25 -129.49 0.98 24.08 0.800 0.56 178.53 9.12 80.93 0.04 56.52 0.25 -132.28 1.00 22.69 0.900 0.56 174.86 8.14 77.76 0.05 56.38 0.24 -135.41 1.02 21.26 1.000 0.56 172.16 7.36 74.77 0.05 57.10 0.24 -138.20 1.04 20.18 1.500 0.56 158.57 4.98 61.30 0.08 55.00 0.25 -147.24 1.08 16.43 1.800 0.55 151.40 4.19 53.86 0.09 52.53 0.26 -150.84 1.09 14.89 1.900 0.55 148.96 3.98 51.41 0.09 51.60 0.26 -151.75 1.09 14.44 2.000 0.55 146.64 3.79 49.00 0.10 50.56 0.27 -152.82 1.09 14.02 2.500 0.55 134.28 3.07 37.07 0.12 44.90 0.29 -157.03 1.09 12.29 3.000 0.56 121.53 2.58 25.46 0.14 38.56 0.32 -161.31 1.07 10.96 3.500 0.57 108.26 2.22 14.13 0.16 32.10 0.36 -165.52 1.06 9.97 4.000 0.58 95.62 1.95 3.18 0.18 25.40 0.39 -170.85 1.03 9.29 4.500 0.60 84.34 1.73 -7.49 0.20 18.42 0.42 -177.21 1.01 9.02 5.000 0.62 74.53 1.55 -17.79 0.21 11.57 0.45 175.01 0.98 8.67 5.500 0.64 65.76 1.40 -27.80 0.22 4.84 0.48 166.70 0.96 7.95 6.000 0.65 57.22 1.27 -37.47 0.24 -1.99 0.51 158.43 0.94 7.29 ne678m04 v c = 5 v, i c = 70 ma typical scattering parameters (t a = 25 c) note: 1. gain calculations: mag = |s 21 | |s 12 | k - 1 ). 2 ( k ? ? = s 11 s 22 - s 21 s 12 when k 1, mag is undefined and msg values are used. msg = |s 21 | |s 12 | , k = 1 + | ? | - |s 11 | - |s 22 | 2 2 2 2 |s 12 s 21 | , mag = maximum available gain msg = maximum stable gain j50 j100 j25 j10 0 -j10 -j25 -j50 -j100 10 50 100 s22 s11 25 +90 o +45 o +0o +0 o 10 20 30 40 -45 o -90 o -135 o +180 o +135 o life support applications these nec products are not intended for use in life support devices, appliances, or systems where the malfunction of these prod ucts can reasonably be expected to result in personal injury. the customers of cel using or selling these products for use in such applications do so at their own risk and agree to fully indemnify cel for all damages resulting from such improper use or sale.
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